Control Logic Circuit: Go to Specifications page.
The circuit diagram of the Control Logic was shown in the specifications part and the working was also explained there. Please refer to the Specifications for details of the working of the control logic circuit. We will be concentrating on the MAX layout and timing issues here. Each SRAM will be used for storing a single bit of data on the memory chip.
Basic Specifications:
|
Name |
Control Logic Circuit |
|
Inputs |
Chip Enable: CEOutput
Enable: OE
Write
Enable: WE
|
|
Outputs |
Pre-charge memory array: PCMPre-charge
decoders:
PCD
Sense
Amplifier
Enable: SE
Output Ready : OR |
|
Size |
146.050*93.880 |
|
Time Delay |
Calibrated
by the designer |
The control logic circuit takes three
inputs – CE, OE, and WE (all active low), and outputs four signals – PCM,
PCD, SE, and OR – that are used internally in the chip.
These signals
are used to control the Memory Array, Row and Column Decoders, I/O Control
Logic, and Sense Amplifiers.
The sequence and timing are two main issues in designing the control logic circuit. The sequence in which these signals shall be asserted was determined and documented in the Specifications Document.
The time that
each of these signals should stay on is still variable and will be finalized
during the final stage of our design (Tuning and Reducing the delay).
Below is the MAX
Layout of the Control Logic Circuit. This is the heart of the chip which
controls all the other components. The colors in the picture below have been
altered to keep our control logic secret. :-)
|
Control circuitry : LAYOUT. |
Simulation
and results

The
figure above shows a simulation of preliminary control logic.
Six cycles have been simulated, in the following order.
*CE signal is assumed low for this simulation.
|
Cycle |
Time
of Cycle on Hspice simulation |
Inputs |
Sequence
of Outputs |
|
Read |
0
– 50ns |
WE=
1 OE
= 0 |
3
ns => PCD & PCM go high 8
ns => PCD & PCM go low 13
ns => SE goes high 22
ns => OR goes high 25
ns => SE & OR goes low |
|
Nothing |
50
– 100 ns |
WE=1 OE
=1 |
All
outputs are low |
|
Read |
100
– 150 ns |
WE=
1 OE
= 0 |
103
ns =>PCD & PCM go high 108
ns => PCD & PCM go low 113
ns => SE goes high 122
ns => OR goes high 125
ns => SE & OR goes low |
|
Write |
150
– 200 ns |
WE
=0 OE
= 1 |
152
ns => PCD goes high 157
ns => PCD goes low |
|
Nothing |
200
– 300 ns |
WE=
1 OE
= 1 |
All
outputs are low |
|
Read |
300
– 350 ns |
WE=
1 OE
= 0 |
303
ns =>PCD & PCM go high 308
ns => PCD & PCM go low 313
ns => SE goes high 322
ns => OR goes high 325
ns => SE & OR goes low |
As
already mentioned, the timing here is picked to make sure that every Read/Write
operation completes. Every pulse
length will be minimized at the final stage of the design to minimize the
overall Read/Write Cycle length.