Control Logic Circuit: Go to Specifications page.

The circuit diagram of the Control Logic was shown in the specifications part and the working was also explained there. Please refer to the Specifications for details of the working of the control logic circuit. We will be concentrating on the MAX layout and timing issues here. Each SRAM will be used for storing a single bit of data on the memory chip.

Basic Specifications:

Name

Control Logic Circuit

Inputs

Chip Enable:  CE

Output Enable: OE

Write Enable:   WE

Outputs

Pre-charge memory array: PCM

Pre-charge decoders: PCD

Sense Amplifier Enable: SE

Output Ready : OR

Size

146.050*93.880

Time Delay

Calibrated by the designer

The control logic circuit takes three inputs – CE, OE, and WE (all active low), and outputs four signals – PCM, PCD, SE, and OR – that are used internally in the chip.

These signals are used to control the Memory Array, Row and Column Decoders, I/O Control Logic, and Sense Amplifiers.

The sequence and timing are two main issues in designing the control logic circuit.  The sequence in which these signals shall be asserted was determined and documented in the Specifications Document.

The time that each of these signals should stay on is still variable and will be finalized during the final stage of our design (Tuning and Reducing the delay).

Below is the MAX Layout of the Control Logic Circuit. This is the heart of the chip which controls all the other components. The colors in the picture below have been altered to keep our control logic secret. :-) 

Control circuitry : LAYOUT.


Simulation and results

 

The figure above shows a simulation of preliminary control logic.  Six cycles have been simulated, in the following order.

 

            *CE signal is assumed low for this simulation.

 

Cycle

Time of Cycle on Hspice simulation

Inputs

Sequence of Outputs

Read

0 – 50ns

WE= 1

OE = 0

3 ns => PCD & PCM go high

8 ns => PCD & PCM go low

13 ns => SE goes high

22 ns => OR goes high

25 ns => SE & OR goes low

Nothing

50 – 100 ns

WE=1

OE =1

All outputs are low

Read

100 – 150 ns

WE= 1

OE = 0

103 ns =>PCD & PCM go high

108 ns => PCD & PCM go low

113 ns => SE goes high

122 ns => OR goes high

125 ns => SE & OR goes low

Write

150 – 200 ns

WE =0

OE = 1

152 ns => PCD goes high

157 ns => PCD goes low

Nothing

200 – 300 ns

WE= 1

OE = 1

All outputs are low

Read

300 – 350 ns

WE= 1

OE = 0

303 ns =>PCD & PCM go high

308 ns => PCD & PCM go low

313 ns => SE goes high

322 ns => OR goes high

325 ns => SE & OR goes low

 

 As already mentioned, the timing here is picked to make sure that every Read/Write operation completes.  Every pulse length will be minimized at the final stage of the design to minimize the overall Read/Write Cycle length.

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